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| LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon MMBT918LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO CASE 318-08, STYLE 6 SOT-23 (TO-236AB) Value 15 30 3.0 50 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING MMBT9181LT1 = M3B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 3.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 1.0 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Collector Cutoff Current ( V CB = 15 Vdc, I E = 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V 30 3.0 -- -- -- 50 Vdc Vdc nAdc V (BR)CEO 15 -- Vdc (BR)EBO I CBO O2-1/2 LESHAN RADIO COMPANY, LTD. MMBT918LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (I C = 3.0 mAdc, V CE = 1.0 Vdc) Collector-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) Base-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) hFE VCE(sat) V BE(sat) 20 -- -- -- 0.4 1.0 -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance (V CB = 0 Vdc, I E = 0, f = 1.0 MHz) (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 , f = 60 MHz) (Figure 1) Power Output (I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz) Common-Emitter Amplifier Power Gain (I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz) V BB EXTERNAL 100 k fT C obo -- -- C ibo NF P out 600 -- MHz pF 3.0 1.7 2.0 6.0 -- -- pF dB mW dB -- -- 30 11 G pe V CC 1000 pF BYPASS 0.018 F 0.018 F 3 C G 0.018 F 0.018 F NF TEST CONDITIONS I C = 1.0 mA V CE = 6.0 VOLTS R S = 50 f = 60 MHz G pe TEST CONDITIONS I C = 6.0 mA V CE = 12 VOLTS f = 200 MHz 50 RF VM Figure 1. NF, G pe Measurement Circuit 20-200 O2-2/2 |
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